SRAM

UT8CR512K32

Overview
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UT8CR512K32 SRAM Memory

CAES memory products are for your applications requiring the highest reliability in extreme environments.

The UT8CR512K32 is a 16Mb, high performance, CMOS static RAM multi-chip module (MCM) available for designs that need more density in a small footprint. This device has a power-down feature that reduces power consumption by more than 90% when deselected, ideal for fault-tolerant designs.

Key Tech Specs
  • Features:
  • 16Mb, 512Kx32
  • 17ns Write maximum Access Time
  • Asynchronous Operation 
  • Compatibility with Industry Standard 512K x 32 SRAMs 
  • CMOS Compatible Input and Output Levels
  • Three-State Bidirectional Data Bus 
  • +3.3V I/O Voltage, +1.8V Core Voltage
  • Applications:
  • Ideal for fault tolerant designs in harsh space environments
  • Operational Environment:
  • Temperature Range: -55°C to +125°C
  • Total Ionizing Dose: <100 krad (Si)
  • SEL Immune: ≤100 MeV-cm2/mg
  • SEU Rate: <8.9 x E-10 errors/bit-day
  • Physical:
  • 68-Pin Ceramic Quad Flatpack 
  • 50 Mil Pitch 
  • Power:
  • 1.2W
  • Flight Grade:
  • QML-Q, QML-V
  • Export Control Classification Number (ECCN):
  • 9A515.e.1
  • SMD Number:
  • 5962-04227

ADDITIONAL SPECIFICATIONS

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Downloads

Datasheet

Datasheet-UT8CR512K32.pdf

 

Application Notes

App-Note-SRAM-ReadOperations.pdf

 

IBIS Model

ut8cr512k32.ibs

 

ADEPT Notifications

SPO-2018-PIN-0003
SMD/Datasheet corrections to include missing AC timing specs and edir VDD and VIO absolute max rating

SPO-2020-D-0002
Product discontinuance notice to announce the end of life (EOL) 300krad TID parts for SMD numbers 04227, 03235, and 03236

SPO-2015-PIN-0003
Product Information Notice is to inform the industry about the CAES SRAMs low power read architecture

 

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