SRAM

UT8ER1M39

Overview

The UT8R1M39 is a 40Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM) that is functionally compatible with traditional 1Mx39 SRAM devices.

The device has a power-down feature that reduces power consumption by more than 90% when deselected, offered in a single package solution, and has superior SEU performance. Ideal for code execution in high performance microprocessors, microcontrollers and FPGAs.

Key Tech Specs
  • Features:
  • 40Mb, 1M x 39
  • Asynchronous Interface
  • External EDAC Support
  • 20ns Read, 10ns Write Access Time
  • Functionally compatible with traditional 1M x 39 SRAM devices 
  • CMOS compatible input and output levels
  • Three-state bidirectional data bus
  • Supply Voltage: +2.3V to +3.6V (Supply), +1.7V to +2.0V (Core)
  • Applications:
  • Microprocessors, microcontrollers, FPGAs
  • Operational Environment:
  • Temperature Range: -55°C to +105°C
  • Total Ionizing Dose: <100 krad (Si)
  • SEL Immune: ≤110 MeV-cm2/mg
  • SEU Rate: <7.3 x E-7 errors/bit-day
  • Physical:
  • 132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
  • Power:
  • +3.3W
  • Flight Grade:
  • QML-Q, QML-Q+, QML-V 
  • Export Control Classification Number (ECCN):
  • 9A515.e.1
  • SMD Number:
  • 5962-10205

ADDITIONAL SPECIFICATIONS

Defense Logistics Agency

Downloads

Datasheet

Datasheet-UT8RxM39.pdf

 

Application Notes

App-Note-SRAM-ReadOperations.pdf

 

IBIS Model

UT8R1M39.zip

 

ADEPT Notifications

SPO-2015-PIN-0003
Product Information Notice is to inform the industry about the CAES SRAMs low power read architecture

Support

Do you need help with an existing product?

Our customer and technical support teams are happy to assist.