SRAM

UT8Q512E

Overview

CAES memory products are for your applications requiring the highest reliability in extreme environments.

The UT8Q512E is a 4Mb, +3.3V, radiation tolerant, asynchronous SRAM, which is compatible with industry-standard 512K x 8 SRAMs well suited for fault tolerant designs for low earth, orbits (LEO).

Key Tech Specs
  • Features:
  • 4Mb, 512K x 8
  • 20ns Maximum Address Access Time 
  • Asynchronous Operation 
  • Compatible with Industry Standard 512K x 8 SRAMs 
  • TTL Compatible Inputs and Output Levels
  • Three-State Bidirectional Data Bus
  • Single +3.3V Supply
  • Applications:
  • Ideal for fault tolerant designs for low earth orbits
  • Operational Environment:
  • Temperature Range: -55°C to +125°C
  • Total Ionizing Dose: <100 krad (Si)
  • SEL Immune: ≤110 MeV-cm2/mg
  • SEU Rate: <1.1 x E-9 errors/bit-day
  • Physical:
  • 36-Pin Ceramic Flatpack
  • Power:
  • 1.0W
  • Flight Grade:
  • QML-Q, QML-V
  • Export Control Classification Number (ECCN):
  • 9A515.e.1
  • SMD Number:
  • 5962-99607

ADDITIONAL SPECIFICATIONS

Defense Logistics Agency

Downloads

Datasheet

Datasheet-UT8Q512E.pdf

 

Application Notes

App-Note-SRAM-ReadOperations.pdf

 

IBIS Model

ut8q512e.ibs

 

ADEPT Notifications

SPO-2015-PIN-0003
Product Information Notice is to inform the industry about the CAES SRAMs low power read architecture

SPO-2018-PIN-0001
SMD/Datasheet corrections to include missing AC timing specs

SPO-2019-D-0011
DMSMS, discontiune for product type 05&06 and create type 07 for Rev F die

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