Overview
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CAES UT8R128K32 SRAM

CAES memory products are for your applications requiring the highest reliability in extreme environments.

The UT8R128K32 is a 4Mb, 128K x 32, high performance CMOS static RAM. This device has a power-down feature that reduces power consumption by more than 90% when deselected. Ideal for buffer memory for calibration, configuration and lookup table data.

Key Tech Specs
  • Features:
  • 4Mb, 128K x 32
  • 20ns Read, 10ns Write Maximum Access Time
  • Asynchronous Operation 
  • Compatible with Industry Standard 128K x 32 SRAMs 
  • TTL Compatible Inputs and Output Levels
  • Three-State Bidirectional Data Bus
  • +3.3V I/O Voltage, +1.8V Core Voltage
  • Applications:
  • Buffer memory for calibration, configuration and lookup table data
  • Operational Environment:
  • Temperature Range:-55°C to +125°C
  • Total Ionizing Dose:<100 krad (Si)
  • SEL Immune:≤111 MeV-cm2/mg
  • SEU Rate:<8.1 x E-16 errors/bit-day
  • Physical:
  • 68-Pin Ceramic Quad Flatpack
  • Power:
  • 5W (maximum package power dissipation)
  • Flight Grade:
  • QML-Q, QML-V
  • Export Control Classification Number (ECCN):
  • 9A515.e.1
  • SMD Number:
  • 5962-06261

ADDITIONAL SPECIFICATIONS

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Downloads

Application Notes

App-Note-SRAM-ReadOperations.pdf

 

IBIS Model

ut8r128k32.ibs

 

ADEPT Notifications

SPO-2015-PIN-0003
Product Information Notice is to inform the industry about the CAES SRAMs low power read architecture

SPO-2018-PIN-0003
SMD/Datasheet corrections to include missing AC timing specs and edir VDD and VIO absolute max rating

SPO-2020-D-0002
Product discontinuance notice to announce the end of life (EOL) 300krad TID parts for SMD numbers 04227, 03235, and 03236

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