SRAM

UT8R4M39

Overview
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CAES UT8R4M39 SRAM

The UT8R4M39 is a 160Mb, radiation hardened by design, high performance CMOS static RAM multichip module (MCM) that is functionally compatible with traditional 4Mx39 SRAM devices.

The device has a power-down feature that reduces power consumption by more than 90% when deselected, offered in a single package solution, and has superior SEU performance. Ideal for code execution in high performance microprocessors, microcontrollers and FPGAs.

Key Tech Specs
  • Features:
  • 160Mb, 4M x 39
  • Asynchronous Interface
  • External EDAC Support
  • 20ns Read, 10ns Write Access Time
  • Functionally compatible with traditional 1M x 39 SRAM devices 
  • CMOS compatible input and output levels
  • Three-state bidirectional data bus
  • Supply Voltage: +2.3V to +3.6V (Supply), +1.7V to +2.0V (Core)
  • Applications:
  • Microprocessors, microcontrollers, FPGAs
  • Operational Environment:
  • Temperature Range:-55°C to +105°C
  • Total Ionizing Dose:<100 krad (Si)
  • SEL Immune:≤110 MeV-cm2/mg
  • SEU Rate:<7.3 x E-7 errors/bit-day
  • Physical:
  • 132-Pin Side-Brazed Dual Cavity Ceramic Quad Flatpack
  • Power:
  • 1.3W
  • Flight Grade:
  • QML-Q, QML-Q+ 
  • Export Control Classification Number (ECCN):
  • 9A515.e.1
  • SMD Number:
  • 5962-10207

ADDITIONAL SPECIFICATIONS

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Downloads

Datasheet

Datasheet-UT8RxM39.pdf

 

Application Notes

App-Note-SRAM-ReadOperations.pdf

 

IBIS Model

UT8R4M39.zip

 

ADEPT Notifications

SPO-2020-PA-0006C
Group D Seam Seal failure of microcircuit, memory, digital, CMOS, radiation-hardened, dual-voltage SRAM, Multichip Module

SPO-2015-AL-0001
An internal review determined Total Ionizing Dose (TID) testing bias circuit was limiting current when performing radiation testing to 100 krad(Si) per MIL-STD-883, M1019, Condition A. As a result of this finding, samples from previously delivered wafer.

SPO-2015-PIN-0003
Product Information Notice is to inform the industry about the CAES SRAMs low power read architecture.

SPO-2013-PIN-0002
Burn-in temperature reduction informational notice.

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