SRAM

UT8R512K8

Overview
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CAES UT8R512K8 SRAM

CAES memory products are for your applications requiring the highest reliability in extreme environments.

The UT8R512K8 is a 4Mb, high performance CMOS static RAM. This device has a power-down feature that reduces power consumption by more than 90% when deselected and well suited for fault tolerant designs for low earth orbits.

Key Tech Specs
  • Features:
  • 4Mb, 512K x 8
  • 15ns Maximum Access Time
  • Asynchronous Operation 
  • Compatible with Industry Standard 512K x 8 SRAMs 
  • TTL Compatible Inputs and Output Levels
  • Three-State Bidirectional Data Bus
  • +3.3V I/O Voltage, +1.8V Core Voltage
  • Applications:
  • Ideal for fault tolerant designs for low earth orbits
  • Operational Environment:
  • Temperature Range:-55°C to +125°C
  • Total Ionizing Dose:<100 krad (Si)
  • SEL Immune:≤100 MeV-cm2/mg
  • SEU Rate:<8.9 x E-10 errors/bit-day
  • Physical:
  • 36-Pin Ceramic Flatpack
  • Power:
  • 1.2W 
  • Flight Grade:
  • QML-Q, QML-V
  • Export Control Classification Number (ECCN):
  • 9A515.e.1
  • SMD Number:
  • 5962-03235

ADDITIONAL SPECIFICATIONS

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Downloads

Datasheet

Datasheet-UT8R512K8.pdf

 

Application Notes

App-Note-SRAM-ReadOperations.pdf

 

IBIS Model

ut8r512k8.ibs

 

ADEPT Notifications

SPO-2015-PIN-0003
Product Information Notice is to inform the industry about the CAES SRAMs low power read architecture

SPO-2018-PIN-0003
SMD/Datasheet corrections to include missing AC timing specs and edir VDD and VIO absolute max rating

SPO-2020-D-0002
Product discontinuance notice to announce the end of life (EOL) 300krad TID parts for SMD numbers 04227, 03235, and 03236

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