CAES has an extensive memory portfolio developed to handle the demands of harsh space and terrestrial environments.
The UT8SDMQ64M40 is a high performance, highly integrated Synchronous Dynamic Random Access Memory (SDRAM) multi-chip module (MCM). The device is 2.5Gb in density and organized as 64Mx40 (16M x 40 x 4 banks). Read and write accesses to the DRAM are burst oriented; an auto-refresh mode is provided, along with a power-saving, power-down mode. Ideal for fault tolerant systems.
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Features:
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2.5Gb, 64Mx40 (16Meg x 40 x 4 banks)
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100MHz Maximum Frequency
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LVTTL Compatible with Multiplexed Address
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Fully Synchronous
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Internal Pipelined Operation
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Programmable Burst Lengths of 1,2,4,8, or Full Page
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Auto-Precharge includes Concurrent Auto Precharge and Autorefresh Mode
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32ms, 8,192-cycle refresh
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Single +3.3V Power Supply
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Applications:
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Ideal for LEON Processors (UT700, GR712)
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Operational Environment:
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Temperature Range: -40°C to +105°C
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Total Ionizing Dose: <100 krad (Si)
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SEL Immune: ≤111 MeV-cm2/mg
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SEU Rate: <1.3 x E-10 errors/bit-day
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128-Pin Ceramic Quad Flatpack
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Power:
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4.0W
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Flight Grade:
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QML-Q, QML-Q+
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Export Control Classification Number (ECCN):
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9A515.e.1
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SMD Number:
Physical:
ADDITIONAL SPECIFICATIONS
Datasheet
Application Notes
App-Note-UT8SDMQ64M4x_TimingAndSignalIntegrity.pdf
Technical Notes
Tech-Note-UT8SDMQ64M4x-Bit-Errors-Due-to-Aging.pdf
IBIS Model
ADEPT Notifications
SPO-2013-PCN-0004
Correct the TLZ parameter
SPO-2014-PA-0001
IBIS Model Inaccuracy
SPO-2014-PIN-0001
Hold notification for 100Krad(Si) RHA level on 2.5Gb SDRAM
SPO-2020-PIN-0001
Addition of alternative burn-in conditions and reinstatement of RHA level “R” (100krad) for 2.5Gb and 3.0Gb SDRAM modules
SPO-2021-D-0001
Discontinuations of device type 02 and addition of device type 03 for SMD 5962-10229
SPO-2021-D-0004
Removal of 100krad device offering due to exhausted die inventory for UT8SDMQ64M40, all device types.
SPO-2021-PA-0001A
CAES Radiation-Hardened 2.5 AND 3.0GBit SDRAM MCM Non-conformance Advisory
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