CAES has an extensive memory portfolio developed to handle the demands of harsh space and terrestrial environments.
The UT8SDMQ64M40 is a high performance, highly integrated Synchronous Dynamic Random Access Memory (SDRAM) multi-chip module (MCM). The device is 2.5Gb in density and organized as 64Mx40 (16M x 40 x 4 banks). Read and write accesses to the DRAM are burst oriented; an auto-refresh mode is provided, along with a power-saving, power-down mode. Ideal for fault tolerant systems.
-
Features:
-
2.5Gb, 64Mx40 (16Meg x 40 x 4 banks)
-
100MHz Maximum Frequency
-
LVTTL Compatible with Multiplexed Address
-
Fully Synchronous
-
Internal Pipelined Operation
-
Programmable Burst Lengths of 1,2,4,8, or Full Page
-
Auto-Precharge includes Concurrent Auto Precharge and Autorefresh Mode
-
32ms, 8,192-cycle refresh
-
Single +3.3V Power Supply
-
Applications:
-
Ideal for LEON Processors (UT700, GR712)
-
Operational Environment:
-
Temperature Range: -40°C to +105°C
-
Total Ionizing Dose: <100 krad (Si)
-
SEL Immune: ≤111 MeV-cm2/mg
-
SEU Rate: <1.3 x E-10 errors/bit-day
-
128-Pin Ceramic Quad Flatpack
-
Power:
-
4.0W
-
Flight Grade:
-
QML-Q, QML-Q+
-
Export Control Classification Number (ECCN):
-
9A515.e.1
-
SMD Number:
Physical:
ADDITIONAL SPECIFICATIONS
Datasheet
Application Notes
App-Note-UT8SDMQ64M4x_TimingAndSignalIntegrity.pdf
IBIS Model
ADEPT Notifications
SPO-2013-PCN-0004
Correct the TLZ parameter
SPO-2014-PA-0001
IBIS Model Inaccuracy
SPO-2014-PIN-0001
Hold notification for 100Krad(Si) RHA level on 2.5Gb SDRAM
SPO-2020-PIN-0001
Addition of alternative burn-in conditions and reinstatement of RHA level “R” (100krad) for 2.5Gb and 3.0Gb SDRAM modules
SPO-2021-D-001
Discontinuations of device type 02 and addition of device type 03 for SMD 5962-10229
SPO-2021-PA-0001A
CAES Radiation-Hardened 2.5 AND 3.0GBit SDRAM MCM Non-conformance Advisory
Do you need help with an existing product?
Our customer and technical support teams are happy to assist.
