CAES has an extensive memory portfolio developed to handle the demands of harsh space and terrestrial environments.
The UT8SDMQ64M48 is a high performance, highly integrated Synchronous Dynamic Random Access Memory (SDRAM) multi-chip module (MCM). The device is 3.0Gb in density and organized as 64Mx48 (16M x 48 x 4 banks). Read and write accesses to the DRAM are burst oriented; an auto-refresh mode is provided, along with a power-saving, power-down mode. Ideal for fault tolerant systems.
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Features:
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3.0Gb, 64Mx48 (16Meg x 48 x 4 banks)
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100MHz Maximum Frequency
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LVTTL Compatible with Multiplexed Address
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Fully Synchronous
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Internal Pipelined Operation
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Programmable Burst Lengths of 1,2,4,8, or Full Page
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Auto-Precharge includes Concurrent Auto Precharge and Autorefresh Mode
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32ms, 8,192-cycle refresh
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Single +3.3V Power Supply
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Applications:
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Ideal for fault tolerant designs in harsh space environments
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Operational Environment
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Temperature Range: -40°C to +105°C
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Total Ionizing Dose: <1 Mrad (Si)
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SEL Immune: ≤100 MeV-cm2/mg
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SEU Threshold: <85 MeV-cm2/mg
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Physical:
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68-Pin Ceramic Flatpack; 68-Pin Pin Grid Array
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Power:
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2.0W
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Flight Grade:
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QML-Q, QML-V
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Export Control Classification Number (ECCN):
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9A515.e.2
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SMD Number:
ADDITIONAL SPECIFICATIONS
Datasheet
Application Notes
App-Note-UT8SDMQ64M4x_TimingAndSignalIntegrity.pdf
Technical Notes
Tech-Note-UT8SDMQ64M4x-Bit-Errors-Due-to-Aging.pdf
ADEPT Notifications
SPO-2013-PCN-0005
Correct the TLZ parameter
SPO-2014-PA-0002
IBIS Model Inaccuracy
SPO-2014-PIN-0002
Hold notification for 100Krad(Si) RHA level on 3.0Gb SDRAM
SPO-2020-PIN-0001
Addition of alternative burn-in conditions and reinstatement of RHA level “R” (100krad) for 2.5Gb and 3.0Gb SDRAM modules
SPO-2021-D-002
Discontinuations of device type 02 and addition of device type 03 for SMD 5962-10230
SPO-2021-PA-0001A
CAES Radiation-Hardened 2.5 AND 3.0GBit SDRAM MCM Non-conformance Advisory
SPO-2021-D-0005
Removal of 100krad device offering due to exhausted die inventory for UT8SDMQ64M48, all device types.
IBIS Model
ECAD Models
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