Overview
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CAES UT8SDMQ64M48 SDRAM

CAES has an extensive memory portfolio developed to handle the demands of harsh space and terrestrial environments.

The UT8SDMQ64M48 is a high performance, highly integrated Synchronous Dynamic Random Access Memory (SDRAM) multi-chip module (MCM).  The device is 3.0Gb in density and organized as 64Mx48 (16M x 48 x 4 banks). Read and write accesses to the DRAM are burst oriented; an auto-refresh mode is provided, along with a power-saving, power-down mode. Ideal for fault tolerant systems.

Key Tech Specs
  • Features:

  • 3.0Gb, 64Mx48 (16Meg x 48 x 4 banks) 

  • 100MHz Maximum Frequency

  • LVTTL Compatible with Multiplexed Address 

  • Fully Synchronous 

  • Internal Pipelined Operation 

  • Programmable Burst Lengths of 1,2,4,8, or Full Page 

  • Auto-Precharge includes Concurrent Auto Precharge and Autorefresh Mode 

  • 32ms, 8,192-cycle refresh

  • Single +3.3V Power Supply 

  • Applications:

  • Ideal for fault tolerant designs in harsh space environments

  • Operational Environment

  • Temperature Range: -40°C to +105°C

  • Total Ionizing Dose: <1 Mrad (Si)

  • SEL Immune: ≤100 MeV-cm2/mg

  • SEU Threshold: <85 MeV-cm2/mg

  • Physical:

  • 68-Pin Ceramic Flatpack; 68-Pin Pin Grid Array

  • Power:

  • 2.0W

  • Flight Grade:

  • QML-Q, QML-V

  • Export Control Classification Number (ECCN):

  • 9A515.e.2

  • SMD Number:

  • 5962-10230 

ADDITIONAL SPECIFICATIONS

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Downloads

Datasheet

Datasheet-UT8SDMQ64M4x.pdf

 

IBIS Model

UT8SDMQ64M48.zip

 

ADEPT Notifications

SPO-2013-PCN-0005
Correct the TLZ parameter

SPO-2014-PA-0002
IBIS Model Inaccuracy

SPO-2014-PIN-0002
Hold notification for 100Krad(Si) RHA level on 3.0Gb SDRAM

SPO-2020-PIN-0001
Addition of alternative burn-in conditions and reinstatement of RHA level “R” (100krad) for 2.5Gb and 3.0Gb SDRAM modules

SPO-2021-PA-0001
CAES Radiation-Hardened 2.5 AND 3.0GBit SDRAM MCM Non-conformance Advisory

Support

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