SRAM

UT9Q512K32E

Overview
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CAES UT9Q512K32E SRAM MCM

CAES memory products are for your applications requiring the highest reliability in extreme environments.

The UT9Q512K32E is a 16Mb, radiation tolerant, multi-chip module (MCM) for designs that require higher density in a small footprint. This device has a power-down feature that reduces power consumption by more than 90% when deselected and well suited for fault tolerant designs for low earth orbits.

Key Tech Specs
  • Features:
  • 16Mb, 512K x 32
  • 25ns Maximum Address Access Time 
  • Asynchronous Operation 
  • Compatible with Industry Standard 512K x 32 SRAMs 
  • TTL Compatible Inputs and Output Levels
  • Three-State Bidirectional Data Bus
  • Single +5V Supply
  • Applications:
  • Ideal for fault tolerant designs for low earth orbits
  • Operational Environment:
  • Temperature Range: -40°C to +105°C
  • Total Ionizing Dose: <100 krad (Si)
  • SEL Immune: ≤110 MeV-cm2/mg
  • SEU Rate: <1.1 x E-9 errors/bit-day
  • Physical:
  • 68-Pin Ceramic Quad Flatpack 
  • 50 Mil Pitch
  • Power:
  • 1.0W per byte
  • Flight Grade:
  • QML-Q, QML-V
  • Export Control Classification Number (ECCN):
  • 3A991.b.2.a
  • SMD Number:
  • 5962-01511

ADDITIONAL SPECIFICATIONS

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Downloads

Datasheet

Datasheet-UT9Q512K32E.pdf

 

Application Notes

App-Note-SRAM-ReadOperations.pdf

 

IBIS Model

ut9q512k32e.ibs

 

ADEPT Notifications

SPO-2015-PIN-0003
Product Information Notice is to inform the industry about the CAES SRAMs low power read architecture

SPO-2018-PIN-0002
SMD/Datasheet corrections to include missing AC timing specs

SPO-2019-D-0012
DMSMS, discontiune for product type 02&03 and create type 04 for Rev F die

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